منابع مشابه
Application of Electron Tomography for Semiconductor Device Analysis
The validity of electron tomography for imaging of high Z and low Z materials is evaluated using high aspect ratio VIAs and a DRAM as an example. The influence of the tiltrange on the 3D reconstruction is tested and it is shown that reliable 3D analysis is possible for up to 300 nm thick samples with a resolution of up to 1-2 nm.
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In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...
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A critical challenge to translating field effect transistors into biochemical sensor platforms is the requirement of a gate electrode, which imposes restrictions on sensor device architectures and results in added expense, poorer scalability, and electrical noise. Here we show that it is possible to eliminate the need of the physical gate electrode and dielectrics altogether using a synthetic t...
متن کاملNAS Semiconductor Device Modeling Program
This document describes the research plans of the MRJ Semiconductor Device Modeling Program at NAS as of September 1997. The general motivation and approach for this work is presented first. Then, for each specific project in the program, the motivation, approach, and specific plans for the contract year are described.
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ژورنال
عنوان ژورنال: The Journal of the Institute of Television Engineers of Japan
سال: 1964
ISSN: 1884-9644
DOI: 10.3169/itej1954.18.503